SK hynix begins mass production of the world's first 321-layer NAND flash memory, improving data transfer speed by 12%, read performance by 13%, and power efficiency by more than 10% over existing 238-layer NAND
On November 21, 2024, South Korean semiconductor manufacturer
SK hynix Starts Mass Production of World's First 321-High NAND
https://news.skhynix.com/sk-hynix-starts-mass-production-of-world-first-321-high-nand/
SK Hynix Begins Mass Producing World's First TLC-Based 321-Layer 4D NAND Flash
https://wccftech.com/sk-hynix-begins-mass-producing-worlds-first-tlc-based-4d-nand-flash-321-layers/
SK hynix began mass production of 238-layer NAND in June 2023, but the 321-layer NAND is said to have a 12% improvement in data transfer speed, 13% improvement in read performance, and more than 10% improvement in power efficiency when reading data compared to that product.
SK hynix begins mass production of world's first 238-layer 4D NAND flash memory, with data transfer speeds 50% faster, energy consumption 21% lower, and manufacturing efficiency 34% higher than previous models
CuA/PuC - GIGAZINE
'By finding a technological breakthrough in stacking technology, SK hynix has become the world's first supplier to mass-produce NAND with more than 300 layers,' the company said in a statement.
The stacking of more than 300 layers was made possible by SK hynix's successful adoption of the '3-plug' process technology, which stacks memory cells into three. SK hynix explained about this technology, 'This process, known for its excellent production efficiency, electrically connects the three plugs through an optimized follow-up process after the completion of the three plug processes. In this process, we developed a low-stress material that prevents semiconductor warping and introduced technology to automatically correct the alignment between the plugs.'
Below is an explanation of the 'Multi-Site Cell (MSC)' technology, which increases the number of cell layers and horizontal density and significantly increases the number of bits. As a result, SK hynix has succeeded in increasing the capacity, speed, and reliability of NAND flash memory.
MSC-YouTube
According to SK hynix, by adopting the same development platform as the conventional 238-layer NAND, the impact of process switching was minimized, resulting in a 59% improvement in productivity compared to the conventional method.
Regarding this NAND, SK hynix said, 'We will steadily expand product applications by offering this 321-layer NAND for early AI applications that require low power consumption and high performance.' In addition, Jungdal Choi, head of NAND development at SK hynix, said, 'SK hynix is on track to become a full-stack AI memory provider by adding a complete portfolio of ultra-high performance NAND to our HBM -led DRAM business,' highlighting the company's move one step closer to leading the AI storage market, represented by SSDs for AI data centers and on-device AI.
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