SK hynix started mass production of the world's first 238-layer 4D NAND flash memory, compared to the previous model, the data transfer speed is 50% faster, the energy consumption is reduced by 21%, and the manufacturing efficiency is improved by 34%



On June 8, 2023 local time, Korean semiconductor manufacturer

SK hynix announced that it has started mass production of the world's first 238-layer 512Gb (Gigabit: 64GB) TLC (Triple Level Cell) 4D NAND flash memory. bottom.

SK hynix Begins Mass Production of Industry's Highest 238-Layer 4D NAND | SK hynix Newsroom
https://news.skhynix.com/sk-hynix-begins-mass-production-of-industries-highest-238-layer-4d-nand/



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https://www.anandtech.com/show/18902/sk-hynix-starts-production-of-238layer-3d-nand-2400-mts

SK Hynix starts mass production for 238-Layer 4D NAND memory, 20% faster PCIe 5.0 NVMe SSDs coming soon - NotebookCheck.net News
https://www.notebookcheck.net/SK-Hynix-starts-mass-production-for-238-Layer-4D-NAND-memory-20-faster-PCIe-5-0-NVMe-SSDs-coming-soon. 724571.0.html

SK hynix Starts Mass Production of Speedy, 238-Layer NAND | Tom's Hardware
https://www.tomshardware.com/news/sk-hynix-starts-mass-production-of-speedy-238-layer-nand

SK Hynix Takes Density Lead With Mass Production Of 238-Layer 4D NAND Flash Memory | HotHardware
https://hothardware.com/news/sk-hynix-mass-production-238-layer-4d-nand-flash-memory

SK hynix Commences Mass Production of 238-Layer 3D NAND, Up To 50% Faster Data Transfers
https://wccftech.com/sk-hynix-commences-mass-production-238-layer-3d-nand-up-to-50-percent-faster/

SK hynix announced the start of mass production of the world's first 238-layer 512Gb TDL 4D NAND flash memory, whose development was announced in August 2022. SK hynix explains that the successfully developed 238-layer NAND is the world's highest layer and has the smallest size in the world.

SK Hynix Successfully Develops World's Highest 238 Layer 4D NAND | SK Hynix Press Release | Kyodo News PR Wire
https://kyodonewsprwire.jp/release/202208034717



The data transfer speed of the 238-layer NAND that was successfully developed this time is 2.4 Gb / s, which is 50% faster than the previous generation 176-layer NAND. In addition, the energy used by the chip to read data is reduced by 21%, and the manufacturing efficiency is improved by 34%.

The specifications of the 238-layer NAND are as follows.

SK hynix TLC NAND

238 layer NAND 176 layer NAND
number of layers 238 176
deck 2 (x119) 2 (x88)
die capacity 512 Gigabit (64GB) 512 Gigabit (64GB)
Die size (mm2) 35.58 ~47.4
Density (Gbit/mm2) ~14.39 10.8
I/O speed 2.4 GT/s (ONFi 5.0) 1.6GT/s (ONFi 4.2)
CuA/PuC use use


In addition, NAND flash memory has SLC (Single Level Cell, 1), MLC (Multi Level Cell, 2), TLC (Triple Level Cell, 3), QLC, depending on how much information is stored in one cell. (Quadruple Level Cell, 4 cells), PLC (Penta Level Cell, 5 cells), etc. The more information that can be stored in one cell, the more data can be stored in the same area. .



SK hynix has announced that it has developed an SSD product for clients that is used as a storage device for smartphones and PCs using 238-layer NAND technology, and started mass production in May. Furthermore, 'Given that we have secured world-class competitiveness in terms of price, performance and quality in both 238-layer NAND and the previous generation 176-layer NAND, these products will drive earnings in the second half. I hope it will happen,' he said.

In addition, SK hynix will start supplying 238-layer NAND products for smartphones after completing product compatibility tests with global smartphone manufacturers, and will apply the same technology to various product groups such as SSDs for PCIe 5.0 and SSDs for servers. We plan to adopt it.

Jumsoo Kim, head of development of 238-layer NAND, said, 'We will continue to overcome the limitations of NAND technology and strengthen our competitiveness so that we can achieve a greater turnaround than anyone else during the coming market recovery period.' said.



in Hardware, Posted by logu_ii