SK Hynix announces the start of mass production of the world's first 12-layer, 36GB HBM3E product

Semiconductor manufacturer SK Hynix has announced that it has begun mass production of the world's first 12-layer HBM3E products. The 12-layer structure will enable a capacity of 36GB, the largest ever for HBM (high bandwidth memory), and the products are expected to be delivered to customers within the next year.

SK hynix Begins Volume Production of the World's First 12-Layer HBM3E

SK Hynix Is Mass Producing 12-Layer 36GB HBM3E for Memory Hungry AI Workloads | HotHardware
https://hothardware.com/news/sk-hynix-mass-producing-12-layer-hbm3e-memory

Since releasing the world's first HBM in 2013, SK Hynix is the only company in the world that develops and supplies the entire lineup from first-generation products (HBM1) to fifth-generation products (HBM3E).

Until now, the maximum capacity of HBM was 24GB, which was made up of eight layers of 3GB DRAM chips, but SK Hynix has increased the capacity by 50% by stacking 12 layers of the same thickness. To achieve this thickness, the DRAM chips are 40% thinner than before. The transfer speed is said to be up to 9.6Gbps.

SK Hynix has solved the structural problems associated with stacking more thin chips by using advanced MR-MUF technology, which injects a liquid protective material between the chips and hardens it. Compared to 4th generation products (HBM3), the heat dissipation performance has been improved by 10%, and warping control has also been strengthened, ensuring the stability and reliability of the product.

Kim Joo-sung, president of SK Hynix and head of AI infrastructure, said, 'As the world's leading AI memory provider, we will steadily prepare next-generation memory products that will overcome the challenges of the AI era.'