The University of Tokyo and AIST develop a high-speed SSD whose writing speed has doubled compared with the past

It was revealed that the University of Tokyo and the National Institute of Advanced Industrial Science and Technology (AIST) jointly developed a new flash memory.

There was an impression that the writing speed of the conventional flash memory is delayed with respect to the reading speed, but the writing speed of SSD adopting this flash memory is twice that of the conventional one.

Details are as below.
The University of Tokyo and AIST, speed up SSD writing - ferroelectric NAND flash memory: Nikkan Kogyo Shimbun

According to the Nikkan Kogyo Shimbun news report, the University of Tokyo graduate schoolTakeshi TakeuchiAssociate Professor of Electrical Engineering and Industrial Technology Research InstituteShigeki SakaiFrontier Device Group Manager said that they jointly developed a ferroelectric NAND flash memory with a new nonvolatile page buffer.

This flash memory adopts the newly developed "batch write algorithm" and "nonvolatile page buffer", it is possible to prevent loss of data to be written even if the power is turned off during writing Besides that, it has succeeded in doubling the writing speed with the SSD which adopted the flash memory.

This memory is scheduled to be announced at "VLSI Circuit Symposium" to be held from today, and it is said that it will aim for practical use in five years later.